2018年
BiFeO3薄膜铁电光伏器件的工作在Science Advances 4, eaat3438, 2018发表 （采用本公司靶材）
Ferroelectric materials for photovoltaics have sparked great interest because of their switchable photoelectric responses and above-bandgap photovoltages that violate conventional photovoltaic theory. However, their relatively low photocurrent and power conversion efficiency limit their potential application in solar cells. To improve performance, conventional strategies focus mainly on narrowing the bandgap to better match the solar spectrum, leaving the fundamental connection between polar order and photovoltaic effect largely overlooked. We report large photovoltaic enhancement by A-site substitutions in a model ferroelectric photovoltaic material, BiFeO3. As revealed by optical measurements and supported by theoretical calculations, the enhancement is accompanied by the chemically driven rotational instability of the polarization, which, in turn, affects the charge transfer at the band edges and drives a direct-to-indirect bandgap transition, highlighting the strong coupling between polarization, lattice, and orbital order parameters in ferroelectrics. Polar order engineering thus provides an additional degree of freedom to further boost photovoltaic efficiency in ferroelectrics and related materials.
2017年
BaTi0.95Co0.05O3薄膜柔性阻变存储器的工作在Adv. Mater. 29，17000425，2017发表 （采用本公司靶材）
Perovskite ceramics and single crystals are commonly hard and brittle due to their small maximum elastic strain. Here, large-scale BaTi0.95Co0.05O3 (BTCO) film with a SrRuO3 (SRO) buffered layer on a 10 μm thick mica substrate is flexible with a small bending radius of 1.4 mm and semitransparent for visible light at wavelengths of 500–800 nm. Mica/SRO/BTCO/Au cells show bipolar resistive switching and the high/low resistance ratio is up to 50. The resistive-switching properties show no obvious changes after the 2.2 mm radius memory being written/erased for 360 000 cycles nor after the memory being bent to 3 mm radius for 10 000 times. Most importantly, the memory works properly at 25–180 °C or after being annealed at 500 °C. The flexible and transparent oxide resistive memory has good prospects for application in smart wearable devices and flexible display screens.
